Ferroelectric Field Dependent Permittivity Model
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چکیده
The Metal-Ferroelectric-Semiconductor FET (MFSFET) device is structurally similar to a regular MOSFET device except that the gate material is composed of a ferroelectric material (PZT) normally sandwiched between two layers of silicon dioxide. Ferro models the PZT material with a set of four material parameters; the saturation polarization Ps, the remanent polarization Pr, the coercive field Ec and the linear dielectric constant epsf.
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